SCR (BTA/BTB04T/D/S/A)

CHIP SIZE: 1.9X1.9(mm2) br / 2.1X2.1(mm2) br / FEATURES: br / Low IGT=10mA max br / Low IH=15mA max br / BTA Family br / Insulating Voltage=2500V(RMS) br / br / ABSOLUTE RATINGS(Limiting Values) br / Symbol Parameter Value Unit br / IT(RMS) RMS on-state current br / (3600 conduction angle) BTA Tj=90C 4 A br / BTB Tj=95C br / ITSM Non-repetitive peak on-state current Tj =25C br / Tp=8.3ms 42 A br / Tp=10ms 40 br / I2t I2t value for fusing (tp=10ms) 80 A2S br / DlT/dt Critical rate of rise of on-state current, Gate supply: br / IG=50mA, dlG/dt=0.1A/? Repetitive F=50HZ 10 A/? br / Non-repetitive 50 br / Tstg br / Tj Storage temperature br / Operating junction temperature -40--+150 br / -40--+110 br / br / Symbol Parameter BTA/BTB04 Unit br / 400T/D/S/A 600T/D/S/A 700T/D/S/A br / VDRM br / VRRM Repetitive peak off-state voltage Tj=110C br / 400 600 700 V br / br / THERMAL RESISTANCES br / Symbol Parameter Value Unit br / Rth (j-c)DC Junction to case BTA 4.4 C/w br / BTB 3.2 br / Rth (j-c)DC 3600 conduction angle, Junction to case BTA 3.3 C/w br / BTB 2.4 br / Rth (j-a) Junction to ambient 60 C/w br / br / ELECTRICAL CHARACTERISTICS(Tj=25C unless otherwise stated) br / Symbol Test conditions Quadrant BTA/BTB04 Unit br / T D S A br / IGT VD=12V(DC), RL=33?Tj=25C 1-2-3 Max 5 5 10 10 mA br / 4 5 10 10 25 br / VGT VD=12V(DC), RL=33?Tj=25C ALL Max 1.5 V br / VGD VD=VDRM, RL=3.3K?Tj=110C ALL Min 0.2 V br / Tgt VD=VDRM, IG=40mA, dlG/dt=0.5A/ us Tj=25C br / ALL Typ 2 us br / IH IT=100mA gate open Tj=25C Max 15 15 25 25 mA br / IL IG=1.2IGT Tj=25C 1-3-4 Typ 10 10 20 20 mA br / 2 20 20 40 40 br / Dv/dt VD=67%VDRM, gate open Tj=110C Typ 10 10 -- -- v/us br / Min -- -- 10 10 br / (dlT/dt)c (dlT/dt)c=1.8A/ms Tj=110C Typ 1 1 5 5 A/us br / VTM ITM=5.0A, tp=380? Tj=25C Max 1.65 V br / IDRM br / IRRM VDRM rated br / VRRM rated Tj=110C Max 0.01 mA br / Tj=25C Max 0.5 mA